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SK keyfoundry unveils breakthrough in GaN technology

Lin Yuchun, Taipei; Jingyue Hsiao, DIGITIMES Asia Tuesday 25 June 2024 0

Credit: AFP

According to PR Newswire and Evertiq, SK keyfoundry has announced that it has secured key device characteristics for a 650V GaN High Electron Mobility Transistor (HEMT).

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